Part Number
|
SML60A18 |
Manufacturer
|
Seme LAB |
Description
|
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
Published
|
Apr 16, 2005 |
Detailed Description
|
SML60A18
TO–3 Package Outline.
Dimensions in mm (inches)
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.0...
|
Datasheet
|
SML60A18
|
Overview
SML60A18
TO–3 Package Outline.
Dimensions in mm (inches)
25.
15 (0.
99) 26.
67 (1.
05) 10.
67 (0.
42) 11.
18 (0.
44) 1.
52 (0.
06) 3.
43 (0.
135)
6.
35 (0.
25) 9.
15 (0.
36)
N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
1.
47 (0.
058) 1.
60 (0.
063)
1
2
3 (case) 3.
84 (0.
151) 4.
09 (0.
161) 7.
92 (0.
312) 12.
70 (0.
50)
VDSS 600V 17.
5A ID(cont) RDS(on) 0.
320Ω
• Faster Switching • Lower Leakage • TO–3 Hermetic Package
38.
61 (1.
52) 39.
12 (1.
54)
29.
9 (1.
177) 30.
4 (1.
197)
Pin 1 – Gate
16.
64 (0.
655) 17.
15 (0.
675)
Pin 2 – Source
Case – Drain
D
22.
23 (0.
875) max.
G S
StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs.
This new technology minimises the JFET effect, ...
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