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SML60A18

Seme LAB
Part Number SML60A18
Manufacturer Seme LAB
Description N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
Published Apr 16, 2005
Detailed Description SML60A18 TO–3 Package Outline. Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.0...
Datasheet PDF File SML60A18 PDF File

SML60A18
SML60A18

Overview
SML60A18 TO–3 Package Outline.
Dimensions in mm (inches) 25.
15 (0.
99) 26.
67 (1.
05) 10.
67 (0.
42) 11.
18 (0.
44) 1.
52 (0.
06) 3.
43 (0.
135) 6.
35 (0.
25) 9.
15 (0.
36) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 1.
47 (0.
058) 1.
60 (0.
063) 1 2 3 (case) 3.
84 (0.
151) 4.
09 (0.
161) 7.
92 (0.
312) 12.
70 (0.
50) VDSS 600V 17.
5A ID(cont) RDS(on) 0.
320Ω • Faster Switching • Lower Leakage • TO–3 Hermetic Package 38.
61 (1.
52) 39.
12 (1.
54) 29.
9 (1.
177) 30.
4 (1.
197) Pin 1 – Gate 16.
64 (0.
655) 17.
15 (0.
675) Pin 2 – Source Case – Drain D 22.
23 (0.
875) max.
G S StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs.
This new technology minimises the JFET effect, ...


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