DISCRETE SEMICONDUCTORS
DATA SHEET
RZ1214B35Y
NPN microwave power
transistor
Product specification Supersedes data of June 1992 1997 Feb 18
Philips Semiconductors
Product specification
NPN microwave power
transistor
FEATURES • Interdigitated structure provides high emitter efficiency • Diffused emitter ballasting resistor providing excellent current sharing and withstanding a high VSWR • Gold metallization realizes very stable characteristics and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance • Internal input matching ensures good stability and allows an easier design of wideband circuits.
APPLICATIONS • Common base class-C wideba...