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RZ1214B35Y

NXP
Part Number RZ1214B35Y
Manufacturer NXP
Description NPN microwave power transistor
Published Apr 16, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET RZ1214B35Y NPN microwave power transistor Product specification Supersedes data of J...
Datasheet PDF File RZ1214B35Y PDF File

RZ1214B35Y
RZ1214B35Y

Overview
DISCRETE SEMICONDUCTORS DATA SHEET RZ1214B35Y NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Interdigitated structure provides high emitter efficiency • Diffused emitter ballasting resistor providing excellent current sharing and withstanding a high VSWR • Gold metallization realizes very stable characteristics and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance • Internal input matching ensures good stability and allows an easier design of wideband circuits.
APPLICATIONS • Common base class-C wideba...


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