RN1241~RN1244
TOSHIBA
Transistor Silicon
NPN Epitaxial Type (PCT Process)
RN1241,RN1242,RN1243,RN1244
For Muting and Switching Applications
l High emitter-base voltage : VEBO = 25v (min) l High reverse hfe : reverse hFE = 150 (typ.
) (VCE = −2V, IC = −4ma) l Low on resistance : RON = 1Ω (typ.
) (IB = 5mA) l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process Unit: mm
Equivalent Circuit
JEDEC EIAJ TOSHIBA Weight: 0.
13g
― ― 2-4E1A
Maximum Ratings (Ta = 25°C)
Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range ...