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RN1204

Toshiba Semiconductor
Part Number RN1204
Manufacturer Toshiba Semiconductor
Description Silicon NPN Transistor
Published Apr 16, 2005
Detailed Description RN1201~RN1206 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1201,RN1202,RN1203,RN1204,RN1205,RN1206 Swi...
Datasheet PDF File RN1204 PDF File

RN1204
RN1204

Overview
RN1201~RN1206 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1201,RN1202,RN1203,RN1204,RN1205,RN1206 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l With built-in bias resistors.
l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2201~2206 Unit: mm Equivalent Circuit and Bias Resistor Values Type No.
RN1201 RN1202 RN1203 RN1204 RN1205 RN1206 R1 (kΩ) 4.
7 10 22 47 2.
2 4.
7 R2 (kΩ) 4.
7 10 22 47 47 47 Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range RN1201~1206 RN1201~1206 RN1201~1204 RN1205, 1206 Symbol VCBO VCEO VEBO Ic Pc Tj Tstg Rating 50 50 10 5 100 300 150 −55~150 JEDEC EIAJ TOSHIBA Weight: 0.
13g ― ― 2-4E1A Unit V V V mA mW °C °C 1 2001-06-07 RN1201~RN1206 Electrical Characteristics (Ta = 25°C) Characteristic Collector cut-off current RN1201~1206 RN1201 RN1202 Emitter cut-off current RN1203 RN1204 RN1205 RN1206 RN1201 RN1202 DC current gain RN1203 RN1204 RN1205 RN1206 Collector-emitter saturation voltage RN1201~1206 RN1201 RN1202 Input voltage (ON) RN1203 RN1204 RN1205 RN1206 Input voltage (OFF) Translation frequency Collector output capacitance RN1201~1204 RN1205~1206 RN1201~1206 RN1201~1206 RN1201 RN1202 Input Resistor RN1203 RN1204 RN1205 RN1206 RN1201~1205 Resistor Ratio RN1205 RN1206 R1/R2 R1 VI (OFF) fT Cob VI (ON) VCE (sat) hFE IEBO Symbol ICBO ICEO Test Circuit ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― VCE = 5V, IC = 0.
1mA VCE =10V, IC = 5mA VCB = 10V, IE = 0, f = 1MHz VCE = 0.
2V, IC = 5mA IC = 5mA, IB = 0.
25mA VCE = 5V, IC = 10mA VEB = 5V, IC = 0 VEB = 10V, IC = 0 Test Condition VCB = 50V, IE = 0 VCE = 50V, IB = 0 Min ― ― 0.
82 0.
38 0.
17 0.
082 0.
078 0.
074 30 50 70 80 80 80 ― 1.
1 1.
2 1.
3 1.
5 0.
6 0.
7 1.
0 0.
5 ― ― 3.
29 7 15.
4 32.
9 1.
54 3.
29 0.
9 Typ.
― ― ― ― ― ― ― ― ― ― ― ...


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