Semiconductor
RFD16N06, RFD16N06SM
16A, 60V, 0.
047 Ohm, N-Channel Power MOSFET
Description
These N-Channel power MOSFETs are manufactured using the MegaFET process.
This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance.
They were designed for use in applications such as switching
regulators, switching converters, motor drivers, and relay drivers.
These
transistors can be operated directly from integrated circuits.
Formerly developmental type TA09771.
September 1998
Features
• 16A, 60V • rDS(ON) = 0.
047Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS R...