RFD3N08L, RFD3N08LSM
Data Sheet July 1999 File Number
2836.
4
3A, 80V, 0.
800 Ohm, Logic Level, N-Channel Power MOSFETs
The RFD3N08L and RFD3N08LSM are N-Channel enhancement mode silicon gate power field effect
transistors specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers.
This performance is accomplished through a special gate oxide design which provides full rated conductance at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages.
Formerly developmental type TA09922.
Features
• 3A, 80V • rDS(ON) = 0.
800Ω • Tem...