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RFD3N08L

Part Number	RFD3N08L
Manufacturer	Intersil Corporation
Description	3A/ 80V/ 0.800 Ohm/ Logic Level/ N-Channel Power MOSFETs
Published	Apr 16, 2005
Detailed Description	RFD3N08L, RFD3N08LSM Data Sheet July 1999 File Number 2836.4 3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs T...
Datasheet	RFD3N08L PDF File

Overview

RFD3N08L, RFD3N08LSM Data Sheet July 1999 File Number 2836.
4 3A, 80V, 0.
800 Ohm, Logic Level, N-Channel Power MOSFETs The RFD3N08L and RFD3N08LSM are N-Channel enhancement mode silicon gate power ﬁeld effect transistors speciﬁcally designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers.
This performance is accomplished through a special gate oxide design which provides full rated conductance at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages.
Formerly developmental type TA09922.
Features • 3A, 80V • rDS(ON) = 0.
800Ω • Tem...

Similar Datasheet

RFD3N08 3A/ 80V/ 0.800 Ohm/ Logic Level/ N-Channel Power MOSFETs - Intersil Corporation
RFD3N08L 3A/ 80V/ 0.800 Ohm/ Logic Level/ N-Channel Power MOSFETs - Intersil Corporation
RFD3N08LSM 3A/ 80V/ 0.800 Ohm/ Logic Level/ N-Channel Power MOSFETs - Intersil Corporation

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