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RFG60P05E
Data Sheet January 2002
60A, 50V, 0.
030 Ohm, ESD Rated, P-Channel Power MOSFET
This is a P-Channel power MOSFET manufactured using the MegaFET process.
This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance.
It was designed for use in applications such as switching
regulators, switching converters, motor drivers, and relay drivers.
This type can be operated directly from integrated circuits.
Formerly developmental type TA09835.
Features
• 60A, 50V • rDS(ON) = 0.
030Ω • Temperature Compensating PSPICE® Model • 2kV ESD Rated • Peak Current vs Pulse Width Curve • UIS Rat...