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RFG60P06E

Part Number	RFG60P06E
Manufacturer	Fairchild Semiconductor
Description	60A/ 60V/ 0.030 Ohm/ ESD Rated/ P-Channel Power MOSFET
Published	Apr 16, 2005
Detailed Description	RFG60P06E Data Sheet January 2002 60A, 60V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET The RFG60P06E P-Channel power ...
Datasheet	RFG60P06E PDF File

Overview

RFG60P06E Data Sheet January 2002 60A, 60V, 0.
030 Ohm, ESD Rated, P-Channel Power MOSFET The RFG60P06E P-Channel power MOSFET is manufactured using the MegaFET process.
This process, which uses feature sizes approaching those of LSI circuits gives optimum utilization of silicon, resulting in outstanding performance.
They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers.
These transistors can be operated directly from integrated circuits.
The RFG60P06E incorporates ESD protection and is designed to withstand 2kV (Human Body Model) of ESD.
Formerly developmental type TA09836.
Features • 60A, 60V • rDS(ON) = 0.
030Ω • Tem...

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