S E M I C O N D U C T O R RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM 70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs Packages JEDEC STYLE TO-247 SOURCE DRAIN GATE December 1995 Features • 70A, 60V • rDS(on) = 0.
014Ω • Temperature Compensated PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve (Single Pulse) • +175oC Operating Temperature DRAIN (BOTTOM SIDE METAL) Description The RFG70N06, RFP70N06, RF1S70N06 and RF1S70N06SM are N-channel power MOSFETs manufactured using the MegaFET process.
This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance.
They were des...

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