Semiconductor
RFM12N35, RFM12N40
12A, 350V and 400V, 0.
500 Ohm, N-Channel Power MOSFETs
Description
These are N-Channel enhancement mode silicon gate power field effect
transistors designed for applications such as switching
regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated circuits.
BRAND RFM12N35 RFM12N40
September 1998
Features
• 12A, 350V and 400V • rDS(ON) = 0.
500Ω
[ /Title (RFM12 N35, RFM12 N40) /Subject (12A, 350V and 400V, 0.
500 Ohm, N-Channel Power MOSFETs) /Author () /Keywords (12A, 350V and 400V, 0.
500 Ohm, N-C...