Semiconductor
RFP2N08, RFP2N10
2A, 80V and 100V, 1.
05 Ohm, N-Channel Power MOSFETs
Description
These are N-channel enhancement mode silicon gate power field effect
transistors designed for applications such as switching
regulators, switching converters.
motor drivers, relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated circuits.
Formerly developmental type TA09282.
July 1998
Features
• 2A, 80V and 100V • rDS(ON) 1.
05Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device • Relate...