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RFP2N08L

Part Number	RFP2N08L
Manufacturer	Intersil Corporation
Description	N-Channel Power MOSFET
Published	Apr 16, 2005
Detailed Description	RFP2N08L, RFP2N10L Data Sheet July 1999 File Number 2872.2 2A, 80V and 100V, 1.050 Ohm, Logic Level, N-Channel Power MO...
Datasheet	RFP2N08L PDF File

Overview

RFP2N08L, RFP2N10L Data Sheet July 1999 File Number 2872.
2 2A, 80V and 100V, 1.
050 Ohm, Logic Level, N-Channel Power MOSFETs The RFP2N08L and RFP2N10L are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers.
This performance is accomplished through a special gate oxide design which provides full rated conductance at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages.
Formerly developmental type TA0924.
Features • 2A, 80V and 100V • rDS(ON) = 1.
050Ω • Design Optimized for 5V Gate Drives • Can be Driven Directly from QMOS, NMOS, TTL Circuits • Compatible with Automotive Drive Requirements • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance Ordering Information PART NUMBER RFP2N08L RFP2N10L PACKAGE TO-220AB TO-220AB BRAND RFP2N08L RFP2N10L • Majority Carrier Device • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” NOTE: When ordering, include the entire part number.
Symbol D G S Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) 6-248 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.
intersil.
com or 407-727-9207 | Copyright © Intersil Corporation 1999 RFP2N08L, RFP2N10L Absolute Maximum Ratings TC = 25oC, Unless Otherwise Speciﬁed RFP2N08L Drain to Source Voltage (Note 1) .
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VDS Drain to Gate Voltage (RGS = 1MΩ) (Note 1) .
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VDGR Continuous Drain Current .
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ID Pulsed Drain Current (Note 3) .
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