Semiconductor
RFP2N12, RFP2N15
2A, 120V and 150V, 1.
750 Ohm, N-Channel Power MOSFETs
Description
These are N-Channel enhancement mode silicon gate power field effect
transistors designed for applications such as switching
regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated circuits.
Formerly developmental type TA09196.
BRAND RFP2N12 RFP2N15
September 1998
Features
• 2A, 120V and 150V • rDS(ON) = 1.
750Ω • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
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