RFP8P10
Data Sheet July 1999 File Number 1496.
2
8A, 100V, 0.
400 Ohm, P-Channel Power MOSFET
This P-Channel enhancement mode silicon gate power field effect
transistor is designed for applications such as switching
regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated circuits.
Formerly developmental type TA17511.
Features
• 8A, 100V • rDS(ON) = 0.
400Ω • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Symbol
D
Ordering Information
PART NUMBER RFP8P10 PACKAGE TO-220AB BRAND RFP8P10
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