DatasheetsPDF.com

RFP8P06E

Intersil Corporation
Part Number RFP8P06E
Manufacturer Intersil Corporation
Description P-Channel MOSFET
Published Apr 16, 2005
Detailed Description RFD8P06E, RFD8P06ESM, RFP8P06E Data Sheet July 1999 File Number 3937.5 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs Thes...
Datasheet PDF File RFP8P06E PDF File

RFP8P06E
RFP8P06E

Overview
RFD8P06E, RFD8P06ESM, RFP8P06E Data Sheet July 1999 File Number 3937.
5 8A, 60V, 0.
300 Ohm, P-Channel Power MOSFETs These are P-Channel power MOSFETs manufactured using the MegaFET process.
This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance.
They were designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and emitter switches for bipolar transistors.
These transistors can be operated directly from integrated circuits.
The RFD8P06E, RFD8P06ESM and RFP8P06E incorporate ESD protection and are designed to withstand 2kV (Human Body Model) of ESD.
Formerly developmental type TA49044.
Features • 8A, 60V • rDS(ON) = 0.
300Ω • Temperature Compensating PSPICE® Model • 2kV ESD Protected • Peak Current vs Pulse Width Curve • UIS Rating Curve • 175oC Operating Temperature • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER RFP8P06E RFD8P06ESM RFD8P06E PACKAGE TO-220AB TO-252AA TO-251AA BRAND RFP8P06E D8P06E D8P06E S G NOTE: When ordering, use the entire part number.
Add the suffix 9A to obtain the TO-252AA variant in tape and reel, i.
e.
RFD8P06ESM9A.
Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) JEDEC TO-251AA SOURCE DRAIN GATE DRAIN (FLANGE) JEDEC TO-252AA DRAIN (FLANGE) GATE SOURCE 4-117 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE® is a registered trademark of MicroSim Corporation.
http://www.
intersil.
com or 407-727-9207 | Copyright © Intersil Corporation 1999.
RFD8P06E, RFD8P06ESM, RFP8P06E Absolute Maximum Ratings TC = 25oC RFD8P06E, RFD8P06ESM, RFP8P06E -60 -60 ±20 8 Refer to Peak Current Curve Refer to UIS Curve 48 0.
32 2 -55 to 175 300 260 UNITS V V V A A W W/oC kV oC oC oC Drain to Source Voltage (Note 1) .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)