RFP4N100, RF1S4N100SM
Data Sheet August 1999 File Number
2457.
4
4.
3A, 1000V, 3.
500 Ohm, High Voltage, N-Channel Power MOSFETs
The RFP4N100 and RFP4N100SM are N-Channel enhancement mode silicon gate power field effect
transistors.
They are designed for use in applications such as switching
regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from an integrated circuit.
Formerly developmental type TA09850.
Features
• 4.
3A, 1000V • rDS(ON) = 3.
500Ω • UIS Rating Curve (Single Pulse) • -55oC to 150oC Operating Temperature • Related Literature - TB...