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RF1S4N100SM

Intersil Corporation
Part Number RF1S4N100SM
Manufacturer Intersil Corporation
Description 4.3A/ 1000V/ 3.500 Ohm/ High Voltage/ N-Channel Power MOSFETs
Published Apr 16, 2005
Detailed Description RFP4N100, RF1S4N100SM Data Sheet August 1999 File Number 2457.4 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power M...
Datasheet PDF File RF1S4N100SM PDF File

RF1S4N100SM
RF1S4N100SM

Overview
RFP4N100, RF1S4N100SM Data Sheet August 1999 File Number 2457.
4 4.
3A, 1000V, 3.
500 Ohm, High Voltage, N-Channel Power MOSFETs The RFP4N100 and RFP4N100SM are N-Channel enhancement mode silicon gate power field effect transistors.
They are designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
This type can be operated directly from an integrated circuit.
Formerly developmental type TA09850.
Features • 4.
3A, 1000V • rDS(ON) = 3.
500Ω • UIS Rating Curve (Single Pulse) • -55oC to 150oC Operating Temperature • Related Literature - TB...


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