DISCRETE SEMICONDUCTORS
DATA SHEET
PTB32001X; PTB32003X; PTB32005X
NPN microwave power
transistors
Product specification Supersedes data of November 1994 1997 Feb 18
Philips Semiconductors
Product specification
NPN microwave power
transistors
FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Multicell geometry gives good balance of dissipated power and low thermal resistance • Localized thick oxide auto-alignment process and gold sandwich metallization ensure an optimum temperature profile and excellent performance and reliability.
APPLICATIONS Common-base, class B...