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PTB32001X

NXP
Part Number PTB32001X
Manufacturer NXP
Description NPN microwave power transistors
Published Apr 16, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET PTB32001X; PTB32003X; PTB32005X NPN microwave power transistors Product specificatio...
Datasheet PDF File PTB32001X PDF File

PTB32001X
PTB32001X

Overview
DISCRETE SEMICONDUCTORS DATA SHEET PTB32001X; PTB32003X; PTB32005X NPN microwave power transistors Product specification Supersedes data of November 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistors FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Multicell geometry gives good balance of dissipated power and low thermal resistance • Localized thick oxide auto-alignment process and gold sandwich metallization ensure an optimum temperature profile and excellent performance and reliability.
APPLICATIONS Common-base, class B...


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