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PTF080601F

Part Number PTF080601F
Manufacturer Infineon Technologies AG
Description LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
Published Apr 16, 2005
Detailed Description Developmental PTF080601 LDMOS RF Power Field Effect Transistor 60 W, 860–960 MHz Description The PTF080601 is a 60–W, i...
Datasheet PTF080601F




Overview
Developmental PTF080601 LDMOS RF Power Field Effect Transistor 60 W, 860–960 MHz Description The PTF080601 is a 60–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band.
Full gold metallization ensures excellent device lifetime and reliability.
Typical EDGE Modulation Spectrum Performance Mod Spectrum vs.
Output Power VDD = 28 V, IDQ = 550 mA, f = 959.
8 MHz -20 Efficiency 50 45 40 35 30 400KHz 25 20 600KHz 15 10 5 32 34 36 38 40 42 44 46 Features • • Broadband internal matching Typical EDGE performance - Average output power = 30 W - Gain = 18 dB - Efficiency = 40% Typical CW performance - Output power at P–1dB = 90 W - Gain = 17 dB - Efficien...






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