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PTF080601A

Infineon Technologies AG
Part Number PTF080601A
Manufacturer Infineon Technologies AG
Description LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
Published Apr 16, 2005
Detailed Description Developmental PTF080601 LDMOS RF Power Field Effect Transistor 60 W, 860–960 MHz Description The PTF080601 is a 60–W, i...
Datasheet PDF File PTF080601A PDF File

PTF080601A
PTF080601A


Overview
Developmental PTF080601 LDMOS RF Power Field Effect Transistor 60 W, 860–960 MHz Description The PTF080601 is a 60–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band.
Full gold metallization ensures excellent device lifetime and reliability.
Typical EDGE Modulation Spectrum Performance Mod Spectrum vs.
Output Power VDD = 28 V, IDQ = 550 mA, f = 959.
8 MHz -20 Efficiency 50 45 40 35 30 400KHz 25 20 600KHz 15 10 5 32 34 36 38 40 42 44 46 Features • • Broadband internal matching Typical EDGE performance - Average output power = 30 W - Gain = 18 dB - Efficiency = 40% Typical CW performance - Output power at P–1dB = 90 W - Gain = 17 dB - Efficiency = 60% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 60 W (CW) output power • Modulation Spectrum (dB) -30 -40 -50 -60 -70 -80 -90 • Efficiency (%) • • • PTF080601A Package 20248 PTF080601E Package 30248 PTF080601F Package 31248 Output Power (dBm) RF Characteristics at TCASE = 25°C unless otherwise indicated Two-Tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 550 mA, POUT = 60 W PEP, fC = 960 MHz, tone spacing = 1000 kHz Characteristic Gain Drain Efficiency Intermodulation Distortion Symbol Gps η D IMD Min — — — Typ 18 42 –32 Max — — — Units dB % dBc EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 550 mA, P OUT = 30 W, f = 959.
8 MHz Characteristic Error Vector Magnitude Modulation Spectrum @ 400 KHz Modulation Spectrum @ 600 KHz Gain Drain Efficiency Developmental Data Sheet 1 Symbol EVM (RMS) ACPR ACPR Gps η D Min — — — — — Typ 2.
0 –61 –74 18 40 Max — — — — — Units % dBc dBc dB % 2003-12-05 Developmental PTF080601 DC Characteristics at TCASE = 25°C unless otherwise indicated Characteristic Drain-Source Breakdown Voltage Drain Leakage Current On-State Resist...


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