PTF080901
LDMOS RF Power Field Effect
Transistor 90 W, 869–960 MHz
Description
The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band.
Full gold metallization ensures excellent device lifetime and reliability.
Features
• • Broadband internal matching Typical EDGE performance - Average output power = 45 W - Gain = 18 dB - Efficiency = 40% Typical CW performance - Output power at P–1dB = 120 W - Gain = 17 dB - Efficiency = 60% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 90 W (CW) output power
EDGE Modulation Spectrum Performan...