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PTF080901

Part Number	PTF080901
Manufacturer	Infineon Technologies AG
Description	LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz
Published	Apr 16, 2005
Detailed Description	PTF080901 LDMOS RF Power Field Effect Transistor 90 W, 869–960 MHz Description The PTF080901 is a 90 W, internally matc...
Datasheet	PTF080901 PDF File

Overview

PTF080901 LDMOS RF Power Field Effect Transistor 90 W, 869–960 MHz Description The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band.
Full gold metallization ensures excellent device lifetime and reliability.
Features • • Broadband internal matching Typical EDGE performance - Average output power = 45 W - Gain = 18 dB - Efficiency = 40% Typical CW performance - Output power at P–1dB = 120 W - Gain = 17 dB - Efficiency = 60% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 90 W (CW) output power EDGE Modulation Spectrum Performance VDD = 28 V, IDQ = 700 mA, f = 959.
8 MHz 0 55 Efficiency 50 45 40 35 30 400 kHz 25 20 600 kHz 36 38 40 42 44 46 48 50 15 10 -10 -20 -30 -40 -50 -60 -70 -80 -90 • Modulation Spectrum (dB) Drain Efficiency (%) • • • • PTF080901E Package 30248 Output Power (dBm) PTF080901F Package 31248 ESD: Electrostatic discharge sensitive device—observe handling precautions! RF Characteristics at TCASE = 25°C unless otherwise indicated EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 700 mA, P OUT = 45 W, f = 959.
8 MHz Characteristic Error Vector Magnitude Modulation Spectrum @ 400 kHz Modulation Spectrum @ 600 kHz Gain Drain Efficiency Symbol EVM (RMS) ACPR ACPR Gps Min — — — — — Typ 2.
5 –62 –74 18 40 Max — — — — — Unit % dBc dBc dB % ηD Two–Tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 650 mA, POUT = 90 W PEP, f = 960 MHz, tone spacing = 1 MHz Characteristic Gain Drain Efficiency Intermodulation Distortion Data Sheet 1 Symbol Gps Min 17 40 — Typ 18 42 –32 Max — — –29 Unit dB % dBc 2004-04-05 ηD IMD PTF080901 DC Characteristics at TCASE = 25°C unless otherwise indicated Characteristic Drain–Source Breakdown Voltage Drain Leakage Current On–State Resistance Operating...

Similar Datasheet

PTF080901 LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz - Infineon Technologies AG
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PTF080901F LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz - Infineon Technologies AG

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