Part Number
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PTF180901E |
Manufacturer
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Infineon Technologies AG |
Description
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GSM/EDGE RF Power FET |
Published
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Apr 16, 2005 |
Detailed Description
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Product Brief
PTF180901
GSM/EDGE RF Power FET
The PTF180901
One of our new line of GSM/EDGE/CDMA2000 devices, the PTF18...
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Datasheet
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PTF180901E
|
Overview
Product Brief
PTF180901
GSM/EDGE RF Power FET
The PTF180901
One of our new line of GSM/EDGE/CDMA2000 devices, the PTF180901 is optimized for the DCS and PCS bands.
This device operates at 47% efficiency with 13.
5 dB of gain and produces 115 W, P -1dB .
This high-gain high-efficiency device is ideal to power your amplifier design.
A laterally diffused single-ended GOLDMOS ® FET, it incorporates full gold metallization and integrated ESD protection to ensure excellent lifetime and reliability.
Performance
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Features
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Optimized for bandwidths 1805 MHz – 1880 MHz and 1930 MHz – 1990 MHz Improved ruggedness Broadband internal matching Full gold metallization Integrated ESD ...
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