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PTF180901F

Infineon Technologies AG
Part Number PTF180901F
Manufacturer Infineon Technologies AG
Description GSM/EDGE RF Power FET
Published Apr 16, 2005
Detailed Description Product Brief PTF180901 GSM/EDGE RF Power FET The PTF180901 One of our new line of GSM/EDGE/CDMA2000 devices, the PTF18...
Datasheet PDF File PTF180901F PDF File

PTF180901F
PTF180901F

Overview
Product Brief PTF180901 GSM/EDGE RF Power FET The PTF180901 One of our new line of GSM/EDGE/CDMA2000 devices, the PTF180901 is optimized for the DCS and PCS bands.
This device operates at 47% efficiency with 13.
5 dB of gain and produces 115 W, P -1dB .
This high-gain high-efficiency device is ideal to power your amplifier design.
A laterally diffused single-ended GOLDMOS ® FET, it incorporates full gold metallization and integrated ESD protection to ensure excellent lifetime and reliability.
Performance ■ ■ Features ■ ■ ■ ■ ■ ■ ■ ■ Optimized for bandwidths 1805 MHz – 1880 MHz and 1930 MHz – 1990 MHz Improved ruggedness Broadband internal matching Full gold metallization Integrated ESD ...


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