MPSA13 / MMBTA13 / PZTA13
MPSA13
MMBTA13
C
PZTA13
C
E C B
E C B
TO-92
E
SOT-23
Mark: 1M
B
SOT-223
NPN Darlington
Transistor
This device is designed for applications requiring extremely high current gain at collector currents to 1.
0 A.
Sourced from Process 05.
See MPSA14 for characteristics.
Absolute Maximum Ratings*
Symbol
VCES VCBO VEBO IC TJ, Tstg Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Collector-Emitter Voltage
Value
30 30 10 1.
2 -55 to +150
Units
V V V A °C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor dev...