Philips Semiconductors
Product specification
Silicon Diffused Power
Transistor
BU1706AB
GENERAL DESCRIPTION
High-voltage, high-speed switching
npn transistor in a plastic envelope suitable for surface mounting, intended for use in high frequency electronic lighting ballast applications.
QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time CONDITIONS VBE = 0 V TYP.
1.
5 0.
25 MAX.
1750 850 5 8 100 1.
0 0.
6 UNIT V V A A W V A µs
Tmb ≤ 25 ˚C IC ...