Philips Semiconductors
Product specification
Silicon Diffused Power
Transistor
BU2525DF
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching
npn transistor with integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.
QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat ts PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Storage time CONDITIONS VBE = 0 V TYP.
8.
0 3.
0 MAX.
1500 ...