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BU2525AW

NXP
Part Number BU2525AW
Manufacturer NXP
Description Silicon Diffused Power Transistor
Published Apr 17, 2005
Detailed Description Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525AW GENERAL DESCRIPTION New gene...
Datasheet PDF File BU2525AW PDF File

BU2525AW
BU2525AW

Overview
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525AW GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.
QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time CONDITIONS VBE = 0 TYP.
8 0.
2 MAX.
1500 800 12 30 125 5.
0 0.
35 UNIT V V A A W V A µs ...


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