Philips Semiconductors
Initial specification
Silicon Diffused Power
Transistor
BU2532AW
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching
npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors.
QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat ts PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Storage time CONDITIONS VBE = 0 TYP.
7 1.
4 MAX.
1500 800 16 40 125 5.
0 1.
8 UNIT V V A A W V A µs
Tmb ≤ 25 ˚C IC = 7.
0 A; IB ...