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BU2532AW

NXP
Part Number BU2532AW
Manufacturer NXP
Description Silicon Diffused Power Transistor
Published Apr 17, 2005
Detailed Description Philips Semiconductors Initial specification Silicon Diffused Power Transistor BU2532AW GENERAL DESCRIPTION New gene...
Datasheet PDF File BU2532AW PDF File

BU2532AW
BU2532AW

Overview
Philips Semiconductors Initial specification Silicon Diffused Power Transistor BU2532AW GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors.
QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat ts PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Storage time CONDITIONS VBE = 0 TYP.
7 1.
4 MAX.
1500 800 16 40 125 5.
0 1.
8 UNIT V V A A W V A µs Tmb ≤ 25 ˚C IC = 7.
0 A; IB = 1.
17 A f = 82 kHz ICsat = 7.
0 A; f = 82 kHz PINNING - SOT429 PIN 1 2 3 tab base collector emitter collector DESCRIPTION PIN CONFIGURATION SYMBOL c b 1 2 3 e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN.
-55 MAX.
1500 800 16 40 10 15 200 10 125 150 150 UNIT V V A A A A mA A W ˚C ˚C average over any 20 ms period Tmb ≤ 25 ˚C THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Junction to mounting base Junction to ambient CONDITIONS in free air TYP.
45 MAX.
1.
0 UNIT K/W K/W 1 Turn-off current.
September 1997 1 Rev 1.
000 Philips Semiconductors Initial specification Silicon Diffused Power Transistor BU2532AW STATIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL ICES ICES IEBO BVEBO VCEsat VBEsat hFE hFE PARAMETER Collector cut-off current 2 CONDITIONS VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 ˚C VEB = 7.
5...


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