Philips Semiconductors
Product specification
Silicon Diffused Power
Transistor
BU2708DF
GENERAL DESCRIPTION
High voltage, high-speed switching
npn transistor with integrated damper diode in a plastic full-pack envelope.
Intended for use in horizontal deflection circuits of colour television receivers.
Features exceptional tolerance to base drive and collector current load variations resulting in a low worst case dissipation.
Designed to withstand VCES pulses up to 1700V.
QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat VF ts PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power ...