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BU2708AX

NXP
Part Number BU2708AX
Manufacturer NXP
Description Silicon Diffused Power Transistor
Published Apr 17, 2005
Detailed Description Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2708AX GENERAL DESCRIPTION High vol...
Datasheet PDF File BU2708AX PDF File

BU2708AX
BU2708AX

Overview
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2708AX GENERAL DESCRIPTION High voltage, high speed switching npn transistor in a plastic full-pack envelope.
Intended for use in horizontal deflection circuits of colour television receivers.
Features exceptional tolerance to base drive and collector current load variations, resulting in a low worst-case dissipation.
Designed to withstand VCES pulses up to 1700 V.
QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat ts PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter ...


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