Philips Semiconductors
Product specification
Silicon Diffused Power
Transistor
BU508AF
GENERAL DESCRIPTION
High voltage, high-speed switching
npn transistors in a fully isolated SOT199 envelope, primarily for use in horizontal deflection circuits of colour television receivers.
QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time CONDITIONS VBE = 0 V TYP.
4.
5 0.
7 MAX.
1500 700 8 15 34 1.
0 UNIT V V A A W V A µs
Ths ≤ 25 ˚C IC = 4.
5 A; IB = ...