Philips Semiconductors
Product specification
Silicon Diffused Power
Transistor
BU508DF
GENERAL DESCRIPTION
High voltage, high-speed switching
npn transistors in a fully isolated SOT199 envelope with integrated efficiency diode, primarily for use in horizontal deflection circuits of colour television receivers.
QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time CONDITIONS VBE = 0 V TYP.
4.
5 1.
6 0.
7 MAX.
1500 700 8 ...