DISCRETE SEMICONDUCTORS
DATA SHEET
BUJ100 Silicon Diffused Power
Transistor
Product specification
September 1999
NXP Semiconductors
Silicon Diffused Power
Transistor
Product specification
BUJ100
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated
npn power switching
transistor in the TO92 envelope intended for use in compact fluorescent lamps and low power electronic lighting ballasts, converters and inverters, etc.
QUICK REFERENCE DATA
SYMBOL VCESM VCBO VCEO IC ICM Ptot VCEsat hFE tfi
PARAMETER
Collector-emitter voltage peak value Collector-Base voltage (open emitter) Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power di...