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BUJ101AU

Part Number	BUJ101AU
Manufacturer	NXP
Description	Silicon Diffused Power Transistor
Published	Apr 17, 2005
Detailed Description	Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ101AU GENERAL DESCRIPTION High-vol...
Datasheet	BUJ101AU PDF File

Overview

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ101AU GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the I-PAK / SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.
QUICK REFERENCE DATA SYMBOL VCESM VCBO VCEO IC ICM Ptot VCEsat hFE tfi PARAMETER Collector-emitter voltage peak value Collector-Base voltage (open emitter) Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Fall time (Inductive) CONDITIONS VBE = 0 V TYP.
0.
32 11 50 MAX.
700...

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