Philips Semiconductors
Product specification
Silicon Diffused Power
Transistor
BUJ101AU
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated
npn power switching
transistor in the I-PAK / SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.
QUICK REFERENCE DATA
SYMBOL VCESM VCBO VCEO IC ICM Ptot VCEsat hFE tfi PARAMETER Collector-emitter voltage peak value Collector-Base voltage (open emitter) Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Fall time (Inductive) CONDITIONS VBE = 0 V TYP.
0.
32 11 50 MAX.
700...