DISCRETE SEMICONDUCTORS
DATA SHEET
BUJ103A Silicon Diffused Power
Transistor
Product specification August 1998
Philips Semiconductors
Product specification
Silicon Diffused Power
Transistor
GENERAL DESCRIPTION
BUJ103A
High-voltage, high-speed planar-passivated
npn power switching
transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching
regulators, motor control systems, etc.
QUICK REFERENCE DATA
SYMBOL VCESM VCBO VCEO IC ICM Ptot VCEsat hFEsat tf PARAMETER Collector-emitter voltage peak value Collector-Base voltage (open emitter) Collector-emitter voltage (open base) Collector current (DC) Collector cur...