DISCRETE SEMICONDUCTORS
DATA SHEET
BUJ105A Silicon Diffused Power
Transistor
Product specification
February 1999
NXP Semiconductors
Silicon Diffused Power
Transistor
Product specification
BUJ105A
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated
npn power switching
transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching
regulators, motor control systems, etc.
QUICK REFERENCE DATA
SYMBOL VCESM VCBO VCEO IC ICM Ptot VCEsat hFEsat tf
PARAMETER
Collector-emitter voltage peak value Collector-Base voltage (open emitter) Collector-emitter voltage (open base) Collector current (DC) Collector cu...