Part Number
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VTE1262 |
Manufacturer
|
PerkinElmer Optoelectronics |
Description
|
GaAlAs Infrared Emitting Diodes |
Published
|
Apr 17, 2005 |
Detailed Description
|
GaAlAs Infrared Emitting Diodes
T-1¾ (5 mm) Plastic Package — 880 nm
VTE1261, 1262
PACKAGE DIMENSIONS inch (mm)
DESCR...
|
Datasheet
|
VTE1262
|
Overview
GaAlAs Infrared Emitting Diodes
T-1¾ (5 mm) Plastic Package — 880 nm
VTE1261, 1262
PACKAGE DIMENSIONS inch (mm)
DESCRIPTION
CASE 26 T-1¾ (5 mm) CHIP SIZE: .
018" x .
018"
This narrow beam angle 5 mm diameter plastic packaged emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high efficiency IRED chip suitable for higher current pulse applications.
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)
Maximum Temperatures Storage and Operating: Continuous Power Dissipation: Derate above 30°C: Maximum Continuous Current: Derate above 30°C: Peak Forward Current, 10 µs, 100 pps: Temp.
Coefficient of Power Output (Typ.
): -40°C to 100°C 200 mW 2.
86 mW/°C 100 mA 1.
43 mA/°C 3.
0...
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