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VTE1281-2

PerkinElmer Optoelectronics
Part Number VTE1281-2
Manufacturer PerkinElmer Optoelectronics
Description GaAlAs Infrared Emitting Diodes
Published Apr 17, 2005
Detailed Description GaAlAs Infrared Emitting Diodes T-1¾ (5 mm) Plastic Package — 880 nm VTE1281-1, -2 PACKAGE DIMENSIONS inch (mm) DESCR...
Datasheet PDF File VTE1281-2 PDF File

VTE1281-2
VTE1281-2

Overview
GaAlAs Infrared Emitting Diodes T-1¾ (5 mm) Plastic Package — 880 nm VTE1281-1, -2 PACKAGE DIMENSIONS inch (mm) DESCRIPTION CASE 26 T-1¾ (5 mm) CHIP SIZE: .
015" x .
015" This narrow beam angle 5 mm diameter plastic packaged emitter contains a medium area, single wirebonded, GaAlAs, 880 nm, high efficiency IRED chip.
It is designed to be cost effective in moderate pulse drive applications.
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage and Operating: Continuous Power Dissipation: Derate above 30°C: Maximum Continuous Current: Derate above 30°C: Peak Forward Current, 10 µs, 100 pps: Temp.
Coefficient of Power Output (Typ.
): -40°C to 100°C 200 mW 2.
86 mW/°C 100 mA 1.
43 mA/°C 2.
5 A -.
8%/°C Maximum Reverse Voltage: Maximum Reverse Current @ VR = 5V: Peak Wavelength (Typical): Junction Capacitance @ 0V, 1 MHz (Typ.
): Response Time @ IF = 20 mA Rise: 1.
0 µs Fall: 1.
0 µs Lead Soldering Temperature: (1.
6 mm from case, 5 seconds max.
) 5.
0V 10 µA 880 nm...


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