GaAlAs Infrared Emitting Diodes T-1¾ (5 mm) Plastic Package — 880 nm VTE1281-1, -2 PACKAGE DIMENSIONS inch (mm) DESCRIPTION CASE 26 T-1¾ (5 mm) CHIP SIZE: .
015" x .
015" This narrow beam angle 5 mm diameter plastic packaged emitter contains a medium area, single wirebonded, GaAlAs, 880 nm, high efficiency IRED chip.
It is designed to be cost effective in moderate pulse drive applications.
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage and Operating: Continuous Power Dissipation: Derate above 30°C: Maximum Continuous Current: Derate above 30°C: Peak Forward Current, 10 µs, 100 pps: Temp.
Coefficient of Power Output (Typ.
): -40°C to 100°C 200 mW 2.
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