Part Number
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VTE3373LA |
Manufacturer
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PerkinElmer Optoelectronics |
Description
|
GaAlAs Infrared Emitting Diodes |
Published
|
Apr 17, 2005 |
Detailed Description
|
GaAlAs Infrared Emitting Diodes
Long T-1 (3 mm) Plastic Package — 880 nm
VTE3372LA, 74LA
PACKAGE DIMENSIONS inch (mm)
...
|
Datasheet
|
VTE3373LA
|
Overview
GaAlAs Infrared Emitting Diodes
Long T-1 (3 mm) Plastic Package — 880 nm
VTE3372LA, 74LA
PACKAGE DIMENSIONS inch (mm)
DESCRIPTION
CASE 50A Long T-1 (3 mm) CHIP SIZE: .
011" x .
011"
This narrow beam angle 3 mm diameter plastic packaged emitter is suitable for use in optical switch applications.
It contains a small area, GaAlAs, 880 nm, high efficiency IRED die.
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)
Maximum Temperatures Storage and Operating: Continuous Power Dissipation: Derate above 30°C: Maximum Continuous Current: Derate above 30°C: Peak Forward Current, 10 µs, 100 pps: Temp.
Coefficient of Power Output (Typ.
): -40°C to 100°C 100 mW 1.
43 mW/°C 50 mA 0.
71 mA/°C 2.
5 A...
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