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VTE3373LA

Part Number	VTE3373LA
Manufacturer	PerkinElmer Optoelectronics
Description	GaAlAs Infrared Emitting Diodes
Published	Apr 17, 2005
Detailed Description	GaAlAs Infrared Emitting Diodes Long T-1 (3 mm) Plastic Package — 880 nm VTE3372LA, 74LA PACKAGE DIMENSIONS inch (mm) ...
Datasheet	VTE3373LA PDF File

Overview

GaAlAs Infrared Emitting Diodes Long T-1 (3 mm) Plastic Package — 880 nm VTE3372LA, 74LA PACKAGE DIMENSIONS inch (mm) DESCRIPTION CASE 50A Long T-1 (3 mm) CHIP SIZE: .
011" x .
011" This narrow beam angle 3 mm diameter plastic packaged emitter is suitable for use in optical switch applications.
It contains a small area, GaAlAs, 880 nm, high efficiency IRED die.
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage and Operating: Continuous Power Dissipation: Derate above 30°C: Maximum Continuous Current: Derate above 30°C: Peak Forward Current, 10 µs, 100 pps: Temp.
Coefficient of Power Output (Typ.
): -40°C to 100°C 100 mW 1.
43 mW/°C 50 mA 0.
71 mA/°C 2.
5 A -.
8%/°C Maximum Reverse Voltage: Maximum Reverse Current @ VR = 5V: Peak Wavelength (Typical): Junction Capacitance @ 0V, 1 MHz (Typ.
): Response Time @ IF = 20 mA Rise:1.
0 µs Fall: 1.
0 µs Lead Soldering Temperature: (1.
6 mm from case, 5 seconds max.
) 5.
0V 10 µA 880 nm 14 pF 260°C ELECTRO-OPTICAL ...

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VTE3373LA GaAlAs Infrared Emitting Diodes - PerkinElmer Optoelectronics

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