VTP Process Photodiodes VTP3410LA PACKAGE DIMENSIONS inch (mm) PRODUCT DESCRIPTION Small area planar silicon photodiode in a long T1, endlooking package.
The package material is infrared transmitting (blocking visible light).
These diodes exhibit low dark current under reverse bias and fast speed of response.
CASE 50A LONG T-1 CHIP ACTIVE AREA: .
0011 in2 (0.
684 mm2) ABSOLUTE MAXIMUM RATINGS Storage Temperature: Operating Temperature: -40°C to 100°C -40°C to 100°C ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTP curves, page 46) VTP3410LA SYMBOL ISC TC ISC VOC TC VOC ID RSH CJ Re SR λrange λp VBR θ1/2 NEP D* CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Open Circu...

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