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VTP3410LA

Part Number	VTP3410LA
Manufacturer	PerkinElmer Optoelectronics
Description	VTP Process Photodiodes
Published	Apr 17, 2005
Detailed Description	VTP Process Photodiodes VTP3410LA PACKAGE DIMENSIONS inch (mm) PRODUCT DESCRIPTION Small area planar silicon photodio...
Datasheet	VTP3410LA PDF File

Overview

VTP Process Photodiodes VTP3410LA PACKAGE DIMENSIONS inch (mm) PRODUCT DESCRIPTION Small area planar silicon photodiode in a long T1, endlooking package.
The package material is infrared transmitting (blocking visible light).
These diodes exhibit low dark current under reverse bias and fast speed of response.
CASE 50A LONG T-1 CHIP ACTIVE AREA: .
0011 in2 (0.
684 mm2) ABSOLUTE MAXIMUM RATINGS Storage Temperature: Operating Temperature: -40°C to 100°C -40°C to 100°C ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTP curves, page 46) VTP3410LA SYMBOL ISC TC ISC VOC TC VOC ID RSH CJ Re SR λrange λp VBR θ1/2 NEP D* CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Open Circu...

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VTP3410LA VTP Process Photodiodes - PerkinElmer Optoelectronics

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